• Part: PJD50N10L
  • Description: 100V N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 441.73 KB
Download PJD50N10L Datasheet PDF
PanJit Semiconductor
PJD50N10L
PJD50N10L is 100V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON), VGS@10V,ID@30A<22mΩ - High switching speed - Improved dv/dt capability - Low reverse transfer capacitance - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) TO-252 TO-251AB Mechanical Data - Case : TO-251AB, TO-252 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams - TO-252 Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25o C TC=100o C Pulsed Drain Current TC=25o C Power Dissipation TC=25o C TC=100o C Continuous Drain Current TA=25o C TA=70o C Power Dissipation TA=25o C Power Dissipation TA=70o C Single Pulse Avalanche Energy (Note 1) Operating Junction and Storage Temperature Range Typical Thermal Resistance Junction to Case Junction to Ambient - Limited only By Maximum Junction...