PJD50N10L
PJD50N10L is 100V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON), VGS@10V,ID@30A<22mΩ
- High switching speed
- Improved dv/dt capability
- Low reverse transfer capacitance
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
TO-252
TO-251AB
Mechanical Data
- Case : TO-251AB, TO-252 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
- TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25o C TC=100o C
Pulsed Drain Current
TC=25o C
Power Dissipation
TC=25o C TC=100o C
Continuous Drain Current
TA=25o C TA=70o C
Power Dissipation
TA=25o C
Power Dissipation
TA=70o C
Single Pulse Avalanche Energy (Note 1)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
Junction to Case Junction to Ambient
- Limited only By Maximum Junction...