• Part: PJD80N06
  • Description: 60V N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 368.82 KB
Download PJD80N06 Datasheet PDF
PanJit Semiconductor
PJD80N06
PJD80N06 is 60V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON) , VGS@10V, ID@20A<7mΩ - High switching speed - Improved dv/dt capability - Low reverse transfer capacitance - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case : TO-252 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0104 ounces, 0.297grams TO-252 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25o C TC=100o C Pulsed Drain Current (Note 1) TC=25o C Power Dissipation TC=25o C TC=100o C Continuous Drain Current TA=25o C TA=70o C Power Dissipation TA=25o C Power Dissipation TA=70o C Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Typical Thermal resistance(Note 4,5) Junction to Case Junction to Ambient - Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM...