PJQ1900
PJQ1900 is N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- Low Voltage Drive (1.2V).
- Advanced Trench Process Technology
- Specially Designed for Switch Load, PWM Application, etc.
- ESD Protected
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case: DFN 3L Package
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.00004 ounces, 0.0011 grams
- Marking: 0
DFN 3L
Unit: inch(mm)
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current, tp<10us Power Dissipation
TA=25o C Tsp=25o C (Note 3)
TA=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient, t<10s (Note 4)
SYMBOL VDS VGS ID IDM PD
TJ,TSTG
RθJA
LIMIT 20 +10 1.2 2.0 4.0 900 7.2
-55~150
UNITS V V
A m W m W/ o C o C o C/W
August 28,2015-REV.00
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