• Part: PJQ1901
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 300.61 KB
Download PJQ1901 Datasheet PDF
PanJit Semiconductor
PJQ1901
PJQ1901 is P-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features - Low Voltage Drive (1.2V). - Advanced Trench Process Technology - Specially Designed for Switch Load, PWM Application, etc. - ESD Protected - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) DFN 3L Mechanical Data - Case: DFN 3L Package - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.00004 ounces, 0.0011 grams - Marking: 1 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current, tp<10us Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient, t<10s (Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT -20 +10 -0.75 -2.0 900 7.2 -55~150 UNITS V V A A m W m W/ o C o C o C/W August 28,2015-REV.00 Page 1 PPJQ1901 Electrical Characteristics...