PJQ1902
PJQ1902 is N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON) , VGS@4.5V, ID@350m A<1.2Ω
- RDS(ON) , VGS@2.5V, ID@200m A<1.6Ω
- RDS(ON) , VGS@1.8V, ID@80m A<2.3Ω
- RDS(ON) , VGS@1.5V, ID@10m A<2.5Ω(typ.)
- Specially Designed for Switch Load, PWM Application, etc.
- ESD Protected 2KV HBM
- Lead free in pliance with EU Ro HS 2011/65/EU directive
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case: DFN3L Package
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.00004 ounces, 0.0011 grams
- Marking: 2
Unit: inch(mm)
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
LIMIT 30 +10 500
1500 700 5.6 -55~150
UNITS V V m A m A m W m W/ o C o C o C/W
September 30,2015-REV.00
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