• Part: PJQ1902
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 318.21 KB
Download PJQ1902 Datasheet PDF
PanJit Semiconductor
PJQ1902
PJQ1902 is N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON) , VGS@4.5V, ID@350m A<1.2Ω - RDS(ON) , VGS@2.5V, ID@200m A<1.6Ω - RDS(ON) , VGS@1.8V, ID@80m A<2.3Ω - RDS(ON) , VGS@1.5V, ID@10m A<2.5Ω(typ.) - Specially Designed for Switch Load, PWM Application, etc. - ESD Protected 2KV HBM - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case: DFN3L Package - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.00004 ounces, 0.0011 grams - Marking: 2 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT 30 +10 500 1500 700 5.6 -55~150 UNITS V V m A m A m W m W/ o C o C o C/W September 30,2015-REV.00 Page...