PJQ2800
PJQ2800 is N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON) , VGS@4.5V, ID@5.2A<32mΩ
- RDS(ON) , VGS@2.5V, ID@3.2A<45mΩ
- RDS(ON) , VGS@1.8V, ID@2.0A<65mΩ
- Advanced Trench Process Technology
- High density cell design for ultra low on-resistance
- ESD Protected
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case: DFN2020-6L Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.00032 ounces, 0.0093 grams
- Marking: 800
DFN2020-6L
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Pulsed Drain Current Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
LIMIT 20 +8 5.2 20.8 1.45 11.6
-55~150
UNITS V V A A W m W/ o C o C o C/W
November 16,2015-REV.01
Page 1
PPJQ2800
Electrical...