• Part: PJQ2800
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 287.96 KB
Download PJQ2800 Datasheet PDF
PanJit Semiconductor
PJQ2800
PJQ2800 is N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON) , VGS@4.5V, ID@5.2A<32mΩ - RDS(ON) , VGS@2.5V, ID@3.2A<45mΩ - RDS(ON) , VGS@1.8V, ID@2.0A<65mΩ - Advanced Trench Process Technology - High density cell design for ultra low on-resistance - ESD Protected - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case: DFN2020-6L Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.00032 ounces, 0.0093 grams - Marking: 800 DFN2020-6L Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT 20 +8 5.2 20.8 1.45 11.6 -55~150 UNITS V V A A W m W/ o C o C o C/W November 16,2015-REV.01 Page 1 PPJQ2800 Electrical...