PJSDA6V1W5 Datasheet | PanJit Semiconductor

FEATURES 150W Power Dissipation (8/20µs Waveform) Very Low Leakage Current, Maximum of 5µA @ 5Vdc Very low Clamping voltage (Max of 10V @ 14A 8/20µs) ESD 15k V air, 8k V Contact pliance 1 2 3 SC70-5L 3 2 1 Industry standard SOT353 (Also known as SC70-5L) APPLICATIONS Personal Digital Assistant (PDA) SIM Card Port Protection (Mobile Phone) Portable Instrumentation Mobile Phones and Accessories puter Data Ports MAXIMUM RATINGS Rating Peak Pulse Power (8/20µs Waveform) Peak Pulse Current (8/20µs Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp I pp V ESD TJ Tstg Value 150 14 >25 -55 to +150 -55 to +150 Units W A k V °C °C ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj Cj Tj = 25°C Conditions Min Typical Max 5 I BR = 1 m A VR = 5V I pp = 5 Amps I pp = 10 Amps 0 Vdc Bias f = 1MHz Between I/O pins and pin 7 5 Vdc Bias f = 1MHz Between I/O pins and pin 7 Units v V µA V V p F p F 7.2 5 8.6 9.1 180 90 10/1/2005 Page .panjit. TYPICAL CHARACTERISTICS .. Percent of Ipp Capacitance, p F PRELIMINARY Clamping Voltage vs Ipp 8x20µsec Surge 16 14 12 Ipp, Amps 10 8 6 4 2 0 6 7 8 9 10 11 12 Clam ping Voltage, V Pulse Waveform 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 time, µsec 20 25 30 Rise time 10-90% - 8µs 50% of Ipp @ 20µs Capacitance vs. Biasing Voltage @1MHz 200 150 100 50 0 0 1 2 3 4 5 Bias Voltage , Vdc 10/1/2005 Page 2 .panjit. TYPICAL APPLICATION EXAMPLE AND PACKAGE LAYOUT...