PJW4N06A Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@10V,ID@3.0A<100mΩ - RDS(ON), VGS@4.5V,ID@2.0A<110mΩ - Advanced Trench Process Technology - High density cell design for ultra low on-resistance - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case : SOT-223 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.043 ounces, 0.123 grams - Marking: W4N06A Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation TA=25o C TA=70o C TA=25o C TA=70o C Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 5) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA - Limited only By Maximum Junction Temperature LIMIT 60 +20 4 3.2 8 3.1 2 -55~150 UNITS V V A A W o C o C/W August 22,2018-REV.01 Page 1 PPJW4N06A Electrical Characteristics...