SiC10A120T
SiC10A120T is SILICON CARBIDE SCHOTTKY DIODE manufactured by PanJit Semiconductor.
Features
- Temperature Independent Switching Behavior
- Low Conduction and Switching Loss
- High Surge Current Capability
- Positive Temperature Coefficient on VF
- Fast Reverse Recovery
Mechanical Data
- Case: Molded plastic, TO-220AC
- Marking: 10A120T
Benefits
- High Frequency Operation
- Higher System Efficiency
- Environmental Protection
- Parallel Device Convenience
- Hard Switching & High Reliability
- High Temperature Application
TO-220AC
Unit: inch(mm)
Maximum Ratings
PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current (TP=10m S, Half Sine Wave, D=0.1)
SYMBOL VRRM VRSM VR
IF(AV)
IFRM
TEST CONDITIONS TJ=25o C TJ=25o C TJ=25o C TC=25o C TC=125o C TC=150o C TC=25o C TC=125o C
VALUE 1200 1200 1200 27.5 15 10 75 58
UNITS V V V A A A A A
February 4,2016-REV.00
Page 1
Si C10A120T
Maximum Ratings
PARAMETER Non-Repetitive Peak Forward Surge Current (TP=10m S, Half Sine Wave) Non-Repetitive Peak Forward Surge Current (TP=10u S, Pulse)
Power Dissipation
SYMBOL IFSM PD
TEST CONDITIONS TC=25o C TC=125o C
TC=25o C
TC=25o C TC=125o C
Operating Junction...
