Datasheet Summary
Transistor
Silicon PNP epitaxial planer type
For high-frequency amplification plementary to 2SC3314
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1 s Features q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings
- 30
- 20
- 5
- 60
- 30 300 150
- 55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 2.54±0.15
EIAJ:SC- 72 New S Type Package s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector...