2SA1323 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings.
30.
20.
5.
60.
30 300 150.
55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.15
EIAJ:SC.
72 New S Type Package
s Electrical Characteristics
Par.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC3314
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –30 –20 –5 –60 –30 300 150 –55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.
2SA1323 Datasheet
