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2SA1512 - Silicon PNP Transistor

Key Features

  • q q q q Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. (Ta=25˚C) Ratings.
  • 25.
  • 20.
  • 7.
  • 1.
  • 0.5 300 150.
  • 55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1.27 1.27 marking 1 2 3 +0.2 0.45.
  • 0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collecto.

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Datasheet Details

Part number 2SA1512
Manufacturer Panasonic
File Size 37.16 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA1512 Datasheet

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Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q q Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. (Ta=25˚C) Ratings –25 –20 –7 –1 – 0.5 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1.27 1.27 marking 1 2 3 +0.2 0.45–0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.