q q q q
Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. (Ta=25˚C)
Ratings.
25.
20.
7.
1.
0.5 300 150.
55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 marking 1 2 3
+0.2 0.45.
0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collecto.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SA1512
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SC1788
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. (Ta=25˚C)
Ratings –25 –20 –7 –1 – 0.5 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 marking 1 2 3
+0.2 0.45–0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.