2SA1961 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q
0.65 max. 1.0 1.0
0.2
High collector to emitter voltage VCEO. s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
(Ta=25˚C)
Ratings.
200.
200.
5.
0.1.
70 1 150.
55 ~ +150 1cm2 Unit V V V A mA W ˚C ˚C
1.2±0.1 0.65 max. 0.1 0.45+.
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Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC5419
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q
0.65 max.
1.0 1.0
0.2
High collector to emitter voltage VCEO.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings –200 –200 –5 – 0.1 –70 1 150 –55 ~ +150 1cm2 Unit V V V A mA W ˚C ˚C
1.2±0.1 0.65 max.
0.1 0.45+ – 0.05
0.45–0.05
+0.1
+0.1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
2.5±0.5 1 2
2.5±0.
2SA1961 Datasheet
