2SA838 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q
High transition frequency fT. s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25˚C)
Ratings.
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Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC1359
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q
High transition frequency fT.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25˚C)
Ratings –30 –20 –5 –30 250 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C
13.5±0.5
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.
2SA838 Datasheet
