2SA879 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
0.45.
0.1 1.27
+0.2
˚C ˚C
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE.
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Transistor
2SA879
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC1573
Unit: mm
5.9± 0.2 4.9± 0.2
q
High collector to emitter voltage VCEO.
+0.3 +0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
2.54± 0.15
Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150
Unit V V V mA mA
0.45–0.1 1.27
13.5± 0.5
0.7–0.2
0.7± 0.1
8.6± 0.2
s Features
0.45–0.1 1.27
+0.
2SA879 Datasheet
