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2SA879 - Silicon NPN triple diffusion planer type Transistor

Datasheet Summary

Features

  • 0.45.
  • 0.1 1.27 +0.2 ˚C ˚C s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCEO VEBO hFE.
  • VCE(sat) fT Cob Conditions VCB =.
  • 12V, IB = 0 IC =.
  • 100µA, IB = 0 IE =.
  • 1µA, IC = 0 VCE =.
  • 10V, IC =.
  • 5mA IC =.
  • 50mA, IB =.
  • 5mA.

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Datasheet Details

Part number 2SA879
Manufacturer Panasonic Semiconductor
File Size 46.37 KB
Description Silicon NPN triple diffusion planer type Transistor
Datasheet download datasheet 2SA879 Datasheet
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Full PDF Text Transcription

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Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9± 0.2 4.9± 0.2 q High collector to emitter voltage VCEO. +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 2.54± 0.15 Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA 0.45–0.1 1.27 13.5± 0.5 0.7–0.2 0.7± 0.1 8.6± 0.2 s Features 0.45–0.1 1.27 +0.
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