2SB0873
2SB0873 is Silicon PNP epitaxial planar type Transistor manufactured by Panasonic.
Features
- Low collector-emitter saturation voltage VCE(sat)
- Large collector current IC
Unit: mm
5.9±0.2 4.9±0.2
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating
- 30
- 20
- 7
- 5
- 10 1 150
- 55 to +150 Unit V V
1 2 3 0.45+0.2
- 0.1 (1.27) (1.27) 0.45+0.2
- 0.1
13.5±0.5
0.7+0.3
- 0.2
0.7±0.1
8.6±0.2
V A A W °C °C
2.54±0.15
1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package
- Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
- 1, 2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (mon-emitter reverse transfer)
- 1
Symbol VCEO VEBO ICBO IEBO h FE VCE(sat) f T Cob
Conditions IC =
- 1 m A, IB = 0 IE =
- 10 µA, IC = 0 VCB =
- 10 V, IE = 0 VEB =
- 5 V, IC = 0 VCE =
- 2 V, IC =
- 2 A IC =
- 3 A, IB =
- 0.1 A VCB =
- 6 V, IE = 50 m A, f = 200 MHz VCB =
- 20 V, IE = 0, f = 1...