• Part: 2SB0873
  • Description: Silicon PNP epitaxial planar type Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 96.87 KB
Download 2SB0873 Datasheet PDF
Panasonic
2SB0873
2SB0873 is Silicon PNP epitaxial planar type Transistor manufactured by Panasonic.
Features - Low collector-emitter saturation voltage VCE(sat) - Large collector current IC Unit: mm 5.9±0.2 4.9±0.2 - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating - 30 - 20 - 7 - 5 - 10 1 150 - 55 to +150 Unit V V 1 2 3 0.45+0.2 - 0.1 (1.27) (1.27) 0.45+0.2 - 0.1 13.5±0.5 0.7+0.3 - 0.2 0.7±0.1 8.6±0.2 V A A W °C °C 2.54±0.15 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package - Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio - 1, 2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (mon-emitter reverse transfer) - 1 Symbol VCEO VEBO ICBO IEBO h FE VCE(sat) f T Cob Conditions IC = - 1 m A, IB = 0 IE = - 10 µA, IC = 0 VCB = - 10 V, IE = 0 VEB = - 5 V, IC = 0 VCE = - 2 V, IC = - 2 A IC = - 3 A, IB = - 0.1 A VCB = - 6 V, IE = 50 m A, f = 200 MHz VCB = - 20 V, IE = 0, f = 1...