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Power Transistors
2SB0929 (2SB929), 2SB0929A (2SB929A)
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Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD1252, 2SD1252A
8.5±0.2
Unit: mm
3.4±0.3 1.0±0.1 6.0±0.2
10.0±0.3 1.5±0.1
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
4.4±0.5
Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C
Rating −60 −80 −60 −80 −5 −3 −5 35 1.3 150 −55 to +150
Unit V
1 2
2.0±0.
2SB0929 Datasheet
