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2SB0929A - Power Transistors

Download the 2SB0929A datasheet PDF. This datasheet also covers the 2SB0929 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High forward current transfer ratio hFE which has satisfactory linearity.
  • Low collector-emitter saturation voltage VCE(sat).
  • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating.
  • 60.
  • 80.
  • 60.
  • 80.
  • 5.
  • 3.
  • 5 35 1.3 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB0929_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A 8.5±0.2 Unit: mm 3.4±0.3 1.0±0.1 6.0±0.2 10.0±0.3 1.5±0.1 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating −60 −80 −60 −80 −5 −3 −5 35 1.3 150 −55 to +150 Unit V 1 2 2.0±0.