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2SB0942 - Power Transistors

Features

  • s 16.7±0.3 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2.
  • High forward current transfer ratio hFE which has satisfactory linearity.
  • Large collector-emitter saturation voltage VCE(sat).
  • Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 φ 3.1±0.1.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0942 2SB0942A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating.
  • 60.

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Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A ■ Features 16.7±0.3 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Large collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0942 2SB0942A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 2 150 −55 to +150 °C °C V A A W 1 2 3 Unit V Solder Dip (4.0) 14.0±0.5 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.
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