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2SB0945 - Power Transistors

Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Large collector current IC.
  • Full-pack package which can be installed to the heat sink with one screw. 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2.
  • 0.1.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector.

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Power Transistors 2SB0945 (2SB945) www.DataSheet4U.net Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw. 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.
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