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Transistor
2SB1220
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD1821
2.1±0.1
Unit: mm
q q q
High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.425
1.25±0.1
0.425
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO ICP IC PC Tj Tstg
–150 –150 –5 –100 –50 150 150 –55 ~ +150
V V V mA mA mW ˚C ˚C
0.7±0.1
0 to 0.1
0.2±0.
2SB1220 Datasheet
