Datasheet4U Logo Datasheet4U.com

2SB1221 - Silicon NPN Transistor

Datasheet Summary

Features

  • 0.45.
  • 0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO.
  • 92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob.
  • Conditions VCB =.
  • 12V, IE = 0 IC =.
  • 100µA, IB = 0 IE =.
  • 1µA, IC = 0 VCE =.
  • 10V, IC =.

📥 Download Datasheet

Datasheet preview – 2SB1221

Datasheet Details

Part number 2SB1221
Manufacturer Panasonic Semiconductor
File Size 46.40 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SB1221 Datasheet
Additional preview pages of the 2SB1221 datasheet.

📁 Similar Datasheet

  • 2SB1220 - Silicon PNP epitaxial planar type Transistor (Kexin)
  • 2SB1223 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SB1223 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1223 - PNP Transistor (INCHANGE)
  • 2SB1224 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SB1225 - Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SB1225 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1225 - PNP Transistor (INCHANGE)
  • 2SB1226 - Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SB1226 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by Panasonic Semiconductor
  • 2SB1221 - Silicon PNP epitaxial planer type Transistor
  • 2SB1220 - Silicon PNP epitaxial planer type Transistor
  • 2SB1207 - Silicon PNP epitaxial planer type Transistor
  • 2SB1209 - Silicon PNP triple diffusion planer type Transistor
  • 2SB1218A - Silicon PNP Transistor
  • 2SB1219 - Silicon PNP epitaxial planer type Transistor
  • 2SB1219A - Silicon PNP epitaxial planer type Transistor
  • 2SB1252 - Silicon PNP epitaxial planar type Transistor

Full PDF Text Transcription

Click to expand full text
Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 2.3±0.
Published: |