• Part: 2SB1435
  • Description: Silicon PNP epitaxial planar type Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 79.32 KB
Download 2SB1435 Datasheet PDF
Panasonic
2SB1435
Features - Low collector-emitter saturation voltage VCE(sat) - Large collector current IC - Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating - 50 - 50 - 5 - 2 - 3 1.5 150 - 55 to +150 Unit V V V A A W °C °C 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package - Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emiter open) Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO...