Datasheet4U Logo Datasheet4U.com

2SB1438 - Silicon PNP epitaxial planer type Transistor

Datasheet Summary

Features

  • q q q Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • (Ta=25˚C) Ratings.
  • 100.
  • 100.
  • 5.
  • 3.
  • 2 1 150.
  • 55 ~ +15.

📥 Download Datasheet

Datasheet preview – 2SB1438

Datasheet Details

Part number 2SB1438
Manufacturer Panasonic Semiconductor
File Size 39.21 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SB1438 Datasheet
Additional preview pages of the 2SB1438 datasheet.

📁 Similar Datasheet

  • 2SB1430 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1430 - PNP Transistor (INCHANGE)
  • 2SB1431 - PNP Silicon Transistor (NEC)
  • 2SB1431 - PNP Transistor (INCHANGE)
  • 2SB1432 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB1436 - Transistor (Rohm)
  • 2SB1436 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1436 - PNP Transistor (INCHANGE)
  • 2SB1400 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SB1400 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by Panasonic Semiconductor
  • 2SB1434 - Silicon PNP epitaxial planer type Transistor
  • 2SB1435 - Silicon PNP epitaxial planar type Transistor
  • 2SB1417 - Silicon PNP epitaxial planar type Transistor
  • 2SB1417A - Silicon PNP epitaxial planar type Transistor
  • 2SB1418 - Silicon PNP epitaxial planar type Darlington
  • 2SB1418A - Silicon PNP epitaxial planar type Darlington
  • 2SB1440 - Silicon PNP epitaxial planer type Transistor
  • 2SB1446 - Silicon PNP epitaxial planer type Transistor

Full PDF Text Transcription

Click to expand full text
Transistor 2SB1438 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q q Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –100 –100 –5 –3 –2 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 0.45–0.05 0.45–0.05 +0.1 +0.1 2.5±0.5 2.5±0.
Published: |