Download 2SB1431 Datasheet PDF
Inchange Semiconductor
2SB1431
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) - High DC Current Gain- : h FE= 2000(Min)@ (VCE= -2V, IC= -3A) - Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -3m A) - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for low-frequency power amplifiers and low- speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -7 Collector Current-Continuous -8 Collector Current-Peak -12 Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Junction Temperature -0.8...