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2SB1431 - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -3mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Datasheet Details

Part number 2SB1431
Manufacturer INCHANGE
File Size 232.58 KB
Description PNP Transistor
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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -3mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low- speed switching applications.
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