Download 2SB1430 Datasheet PDF
Inchange Semiconductor
2SB1430
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) - High DC Current Gain- : h FE= 2000(Min)@ (VCE= -2V, IC= -2A) - Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2m A) - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for low-frequency power amplifiers and lowspeed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -7 Collector Current-Continuous -5 Collector Current-Peak -10 Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Junction Temperature -0.5...