Datasheet4U Logo Datasheet4U.com

2SB1430 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation

📥 Download Datasheet

Datasheet preview – 2SB1430

Datasheet Details

Part number 2SB1430
Manufacturer INCHANGE
File Size 214.87 KB
Description PNP Transistor
Datasheet download datasheet 2SB1430 Datasheet
Additional preview pages of the 2SB1430 datasheet.

📁 Similar Datasheet

  • 2SB1430 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1431 - PNP Silicon Transistor (NEC)
  • 2SB1432 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB1434 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB1435 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SB1436 - Transistor (Rohm)
  • 2SB1436 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1438 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB1400 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SB1400 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and lowspeed switching applications.
Published: |