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2SB1436 - PNP Transistor

General Description

Low Collector Saturation Voltage High Power Dissipation- : PC= 5W(Max)@TC=25℃ Complement to Type 2SD2166 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stage of audio amplifier, voltage regulator, D

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isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 5W(Max)@TC=25℃ ·Complement to Type 2SD2166 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Pulse PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 5 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1436 isc website：www.iscsemi.