2SB1554 - Silicon PNP epitaxial planar type Transistor
Panasonic
Key Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q
High forward current transfer ratio hFE which has satisfactory linearity Allowing automatic insertion with radial taping (TC=25˚C)
90°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
2.5±0.2
1.2±0.1
C.
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Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q
High forward current transfer ratio hFE which has satisfactory linearity Allowing automatic insertion with radial taping (TC=25˚C)
90°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
2.5±0.2
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip
Ratings –60 –60 –20 –8 –4 –2 15 2 150 –55 to +150
Unit V V V A A A W ˚C ˚C
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
0.55±0.1
C1.0
1 2 3
2.5±0.2
2.5±0.
2SB1554 Datasheet
