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Transistor
2SB1599
Silicon PNP epitaxial planer type
For power amplification Complementary to 2SD2457
Unit: mm
s Features
q q
4.5±0.1 1.6±0.2
1.5±0.1
Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.6±0.1
0.4max.
45°
1.0–0.2
+0.1
0.4±0.08
4.0–0.20
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Base current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings –50 –40 –5 –3 – 0.6 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
0.5±0.08 1.5±0.1 3.0±0.15 3 2 1
0.4±0.
2SB1599 Datasheet
