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Power Transistors
2SB937, 2SB937A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1260 and 2SD1260A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –4 –2 35 1.3 150 –55 to +150 Unit V
1.5±0.1
s Features
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB937 2SB937A 2SB937 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.
2SB937 Datasheet
