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2SB940 - PNP Transistor

Key Features

  • 1:Base 2:Collector 3:Emitter TO.
  • 220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT.
  • Conditions VCB =.
  • 200V, IE = 0 VEB =.
  • 4V, IC = 0 IC =.
  • 50µA, IE = 0 IC =.
  • 5mA, IB = 0 IE =.
  • 500µA, IC = 0 VCE =.
  • 10V, IC =.
  • 150mA VCE =.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q 16.7±0.3 14.0±0.