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Power Transistors
2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
4.2±0.2
For power amplification and switching Complementary to 2SD1276 and 2SD1276A
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
Unit: mm
7.5±0.2
s Features
q q q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V
16.7±0.3
φ3.1±0.1
4.0
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB950 2SB950A 2SB950 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 –0.1
+0.2
2.54±0.25 5.08±0.
2SB950 Datasheet
