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2SB950A - Silicon PNP Power Transistor

General Description

High DC Current Gain- : hFE= 2000(Min.)@IC= -3A High Speed Switching Complement to Type 2SD1276A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier and switching applications.

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Part Number Description Manufacturer
2SB950A Power Transistors Panasonic Semiconductor
2SB950 PNP Transistor Panasonic Semiconductor
2SB950 Power Transistors Panasonic Semiconductor
2SB951 PNP Transistor Panasonic Semiconductor
2SB951 Power Transistors Panasonic Semiconductor

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min.)@IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB950A isc website：www.iscsemi.