2SB950A - Silicon PNP Power Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE= 2000(Min.)@IC= -3A High Speed Switching Complement to Type 2SD1276A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier and switching applications.

Inchange Semiconductor

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Datasheet Details

Part number	2SB950A
Manufacturer	Inchange Semiconductor
File Size	219.12 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB950A Datasheet
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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min.)@IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB950A isc website：www.iscsemi.

Published: Oct 25, 2013 |