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Power Transistors
2SB0950 (2SB950), 2SB0950A (2SB950A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type darlington
Unit: mm
0.7±0.1
For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features
• High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
10.0±0.2 5.5±0.2
4.2±0.2 2.7±0.2
7.5±0.2
φ 3.1±0.1
Parameter Collector-base voltage (Emitter open) 2SB0950 2SB0950A
Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg
Rating −60 −80 −60 −80 −5 −4 −8 40 2 150 −55 to +150
Unit V
Solder Dip (4.0)
■ Absolute Maximum Ratings TC = 25°C
14.0±0.5
4.2±0.2
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
0.8±0.1
2.54±0.
2SB950A Datasheet
