2SB976 Datasheet PDF - Panasonic Semiconductor Power Transistors Specs

2SB976 - Power Transistors

This page provides the datasheet information for the 2SB976, a member of the 2SB0976 Power Transistors family.

Datasheet Summary

Features

s.
Low collector-emitter saturation voltage VCE(sat).
Large collector current IC 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5.
Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating.
27.
18.

Datasheet Details

Part number	2SB976
Manufacturer	Panasonic Semiconductor
File Size	86.43 KB
Description	Power Transistors
Datasheet	2SB976 Datasheet
Additional preview pages of the 2SB976 datasheet.

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Full PDF Text Transcription

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Transistors 2SB0976 (2SB976) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −27 −18 −7 −5 −8 0.75 150 −55 to +150 Unit V V 1 2 3 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 0.45+0.15 –0.1 2.3±0.2 V A A W °C °C 5.1±0.

Published: Jul 7, 2011 |