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2SB976 - PNP Transistor

Datasheet Summary

Features

  • q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings.
  • 27.
  • 18.
  • 7.
  • 8.
  • 5 0.75 150.
  • 55 ~ +150 Unit V V 1 2 3 0.45.
  • 0.1 1.27 +0.2 13.5±0.5 Low collector to emitter saturation voltage VCE(sat). Large collector c.

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Datasheet Details

Part number 2SB976
Manufacturer Panasonic Semiconductor
File Size 35.84 KB
Description PNP Transistor
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Transistor 2SB976 Silicon PNP epitaxial planer type For low-frequency output amplification For DC-DC converter For stroboscope Unit: mm 5.0±0.2 4.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –27 –18 –7 –8 –5 0.75 150 –55 ~ +150 Unit V V 1 2 3 0.45 –0.1 1.27 +0.2 13.5±0.5 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 5.1±0.2 0.45 –0.1 1.27 +0.2 2.3±0.2 V A A W ˚C ˚C 2.54±0.
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