The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SC1847
Silicon NPN epitaxial planar type
For medium output power amplification Complementary to 2SA0886
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
3.05±0.1
■ Features
• Output of 4 W can be obtained by a complementary pair with
2SA0886 • TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
50
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
40
V
sta tinu Emitter-base voltage (Collector open) VEBO
5
V
a e cycle iscon Collector current
IC
1.5
A
life d, d Peak collector current
ICP
3
A
n u duct type Collector power dissipation
PC
1.