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Transistors
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification Complementary to 2SA1022
0.40+–00..0150
Unit: mm 0.16+–00..0160
3
1.50–+00..0255 2.8–+00..32
■ Features
0.4±0.2
• Optimum for RF amplification of FM/AM radios
5˚
• High transition frequency fT • Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
1
2
(0.95) (0.95)
1.9±0.1 2.90+–00..0250
(0.65)
/ ■ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
c e. d ty Collector-base voltage (Emitter open) VCBO
30
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
20
0 to 0.1 1.1–+00..12 1.1–+00..
2SC2295 Datasheet
