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2SC3312 - Silicon NPN Transistor

Key Features

  • .75 max.
  • Optimum for high-density mounting.
  • Allowing supply with the radial taping.
  • Low noise voltage NV.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 55 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 V le sta ntinu Collector current IC 100 mA a e cyc isco Peak collector current ICP 200 mA life d, d Collecto.

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Datasheet Details

Part number 2SC3312
Manufacturer Panasonic
File Size 218.49 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3312 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features 0.75 max. • Optimum for high-density mounting • Allowing supply with the radial taping • Low noise voltage NV ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 55 V n d ge.