q q q q
Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking
+0.2 0.45.
0.1
15.6±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25˚C)
Ratings 30 20 5 30 300 150.
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Transistor
2SC3314
Silicon NPN epitaxial planer type
For high-frequency amplification Complementary to 2SA1323
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q q q q
Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT.
marking
+0.2 0.45–0.1
15.6±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25˚C)
Ratings 30 20 5 30 300 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.
2SC3314 Datasheet
