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Transistors
2SC3757
Silicon NPN epitaxial planar type
For high-speed switching
Unit: mm
■ Features
• Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and au-
0.40+–00..0150 3
0.16+–00..0160
0.4±0.2
1.50–+00..0255 2.8–+00..32
tomatic insertion through the tape packing and the magazine packing
1
2
(0.95) (0.95)
5˚
(0.65)
1.9±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
40
V
c e. d ty Collector-emitter voltage (E-B short) VCES
40
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
0 to 0.1 1.1–+00..12 1.1–+00..
2SC3757 Datasheet
