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Power Transistors
2SC3743
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
10.0±0.2
4.2±0.2
■ Features
5.5±0.2
2.7±0.2
• High-speed switching • Wide safe operation area and high breakdown voltage
φ 3.1±0.1
• Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one
screw
1.4±0.1
1.3±0.2
/ ■ Absolute Maximum Ratings TC = 25°C
14.0±0.5 Solder Dip
(4.0)
0.8±0.1
0.5+–00..12
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
900
V
c e.
2SC3743 Datasheet
