Datasheet Details
| Part number | 2SC3747 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.63 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3747-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3747.
| Part number | 2SC3747 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.63 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3747-INCHANGE.pdf |
|
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·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·Complement to Type 2SA1470 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power amplifiers ·High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 10 A 25 W 2.0 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3747 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SC3743 | NPN Transistor |
| 2SC3746 | NPN Transistor |
| 2SC3748 | NPN Transistor |
| 2SC3749 | NPN Transistor |
| 2SC3709A | NPN Transistor |
| 2SC3710 | NPN Transistor |
| 2SC3723 | NPN Transistor |
| 2SC3725 | NPN Transistor |
| 2SC3750 | NPN Transistor |
| 2SC3751 | NPN Transistor |