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2SC3747 - Silicon NPN Power Transistor

General Description

Good Linearity of hFE High Switching Speed Low Collector Saturation Voltage Complement to Type 2SA1470 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inductance, lamp drivers Inverters, converters Power amplifie

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isc Silicon NPN Power Transistor 2SC3747 DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·Complement to Type 2SA1470 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power amplifiers ·High-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 10 A 25 W 2.0 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.