Inchange Semiconductor 2SC3747
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3747 |
|---|---|
| Datasheet | 2SC3747 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Good Linearity of hFE●High Switching Speed
●Low Collector Saturation Voltage
●Complement to Type 2SA1470
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Inductance, lamp drivers●Inverters, converters
●Power amplifiers
●High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 10 A 25 W 2.0 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO E...