Datasheet Details
| Part number | 2SC3743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3743-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3743-INCHANGE.pdf |
|
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· ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3743 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3743 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3743 | Silicon NPN Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| 2SC3746 | NPN Transistor |
| 2SC3747 | Silicon NPN Power Transistor |
| 2SC3748 | NPN Transistor |
| 2SC3749 | NPN Transistor |
| 2SC3709A | NPN Transistor |
| 2SC3710 | NPN Transistor |
| 2SC3723 | NPN Transistor |
| 2SC3725 | NPN Transistor |
| 2SC3750 | NPN Transistor |
| 2SC3751 | NPN Transistor |