Download 2SC3743 Datasheet PDF
Inchange Semiconductor
2SC3743
DESCRIPTION - - Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) - Wide Area of Safe Operation - High Speed Switching - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2...