Datasheet Details
| Part number | 2SC3749 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.45 KB |
| Description | NPN Transistor |
| Download | 2SC3749 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3749 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.45 KB |
| Description | NPN Transistor |
| Download | 2SC3749 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3749 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3749 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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