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2SC3874 - Silicon NPN Transistor

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Features

  • q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 500 500 400 7 25 15 5 Unit V V V V A A A 26.0±0.5 10.0 1.5 2.0 4.0 1.5 20.0±0.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junc.

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Datasheet Details

Part number 2SC3874
Manufacturer Panasonic Semiconductor
File Size 188.95 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3874 Datasheet
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www.DataSheet4U.com Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 500 500 400 7 25 15 5 Unit V V V V A A A 26.0±0.5 10.0 1.5 2.0 4.0 1.5 20.0±0.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB 2.0±0.3 3.0±0.3 1.0±0.2 2.
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