2SC3871 Description
·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3871 TC=25℃ unless otherwise specified SYMBOL...