q q q
0.7
4.0
0.65 max. 1.0 1.0
High transition frequency fT. Large collector power dissipation PC. Allowing supply with the radial taping. 0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature.
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Transistor
2SC4502
Silicon NPN epitaxial planer type
For mtermediate frequency amplification
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.5±0.1
s Features
q q q
0.7
4.0
0.65 max.
1.0 1.0
High transition frequency fT. Large collector power dissipation PC. Allowing supply with the radial taping.
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 50 45 4 50 1 150 –55 ~ +150 Unit
0.45–0.05
0.45–0.05
+0.1
+0.1
Symbol VCBO VCEO VEBO IC PC* Tj Tstg
2.5±0.5 1 2
2.5±0.
2SC4502 Datasheet
