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2SC4559 - NPN Transistor

Key Features

  • 0.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2.
  • High-speed switching.
  • High collector-emitter voltage (Base open) VCEO φ 3.1±0.1.
  • Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 /.
  • Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+.
  • 00..12 Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 500 V c type Collector-emitter voltage (E-B short) VCES 500 V n d t.

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Power Transistors 2SC4559 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 • High-speed switching • High collector-emitter voltage (Base open) VCEO φ 3.1±0.1 • Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 / ■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+–00..12 Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 500 V c type Collector-emitter voltage (E-B short) VCES 500 V n d tage.