2SC4559 Datasheet and Specifications PDF

The 2SC4559 is a NPN Transistor.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Max Operating Temp150 °C
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Part Number2SC4559 Datasheet
ManufacturerPanasonic
Overview Power Transistors 2SC4559 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.. 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2
* High-speed switching
* High collector-emitter voltage (Base open) VCEO φ 3.1±0.1
* Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 /
* Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 .
Part Number2SC4559 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL. OL PARAMETER INCHANGE Semiconductor 2SC4559 CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collec.
Part Number2SC4559 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220Fa package ·High speed switching ·High VCEO APPLICATIONS ·For high breakdown voltage ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4559 Fig.1. r saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 10 8 MIN 400 2SC4559 SYMBOL V(BR).

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